A Multi-topic International Conference
UNCC_Honet logo_HONET    
11th HONET-PfE
Charlotte, North Carolina, USA
December 15 - 17, 2014 
     
Dr. Alex Gurary
Principal Development Engineer ,
Veeco Corporation
USA                  
Email: agurary@veeco.com

Title:New single wafer reactor MOCVD platform for GaN based power devices

Abstract:

  GaN based power electronic presents one of the fastest growing segments of semiconductor market with 8% Compounded Annual Rate of Growth (CARG) between 2014 and 2020. GaN advantages vs. SiC and Si devices include higher power density and breakdown voltage, better conversion efficiency, smaller footprint and higher operational temperature limit. GaN devices are most suitable for applications in the 400-900 volts range. They include diodes, MOSFET’s and other components for power supplies, motor drivers, automobiles, Photovoltaic invertors, electric and hybrid vehicles.
  Today GaN devices are evolving from emerging to validation phase when devices are getting qualified, pilot production established and market requirements and specifications finalized. Reliable deposition equipment tailored to GaN devices deposition process requirements is critical for this phase. In this presentation we review new single wafers MOCVD TurboDisk platform for GaN based devices released by Veeco in November 2014. This system allows epitaxial structures to be grown on 150 mm and 200 mm wafers. Our analysis includes the comparison between multi-wafer and single wafer reactors. We will report on thickness and composition uniformity, particles, wafer bow control as well as on run-to-run and reactor-to-reactor repeatability critical to establish pilot production.

Short Biography:
  Dr. Alex Gurary received his Ph.D. from Ukrainian National Academy of Science for analyzing mechanical strength of metal composite materials under extreme conditions. For the last 25 years he has being developing deposition equipment for advanced compound semiconductor materials such as GaN, AsP, and SiC. He was instrumental in the development of the first large scale production equipment for GaN based Light Emitting Diodes.
  Dr. Gurary coauthored more than 30 patents, 20 publications and conference presentations. Now he is working as Principal Development Engineer at Veeco Corporation.

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